SI3529DV-T1-GE3 datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

• Маркировка
  SI3529DV-T1-GE3
• Производитель
  Vishay Intertechnology
• Описание
  Vishay Intertechnology SI3529DV-T1-GE3 Drain Source Voltage Vds: 40V Module Configuration: Dual No. Of Pins: 6 Operating Temperature Range: -55?‚?°C To +150?‚?°C Power Dissipation Pd: 1.15W Rohs Compliant: Yes Threshold Voltage Vgs Typ: 3V Transistor Polarity: N And P Channel Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 40 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 2.25 A, 1.76 A Resistance Drain-Source RDS (on): 0.125 Ohms, 0.215 Ohms Configuration: Dual Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TSOP-6 Minimum Operating Temperature: - 55 C Power Dissipation: 1.15 W Part # Aliases: SI3529DV-GE3
• Количество страниц
  12 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  155,00 KB

SI3529DV-T1-GE3 datasheet скачать

SI3529DV-T1-GE3 datasheet